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Originally Posted by beenuseren
I am talking about BJT, not FET. BJT does have the depletion region at the BE and CB junction.
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A depletion region forms on each side of an inversely polarized junction, this is the mechanism of a JFET, but the BE junction of a BJT isn't inversely polarized in CE configuration. The other juction is inversely polarized except in saturation, but this in't really central to the functioning of the stage.
Quote:
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Originally Posted by beenuseren
My doubt is when we increase the base current in BJT(CE config), how does the Vce voltage reduces, there by increasing the current?
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Cart before the horse. The charge carriers from the emitter, which reach the CE junction before recombination and are hence majority carriers for the base, are what cause the collector current because they cross the CB junction as if it were directly polarized. The voltage on the collector terminal depends on what it's connected to, but usually the stage is designed so there's a resistance and therefore a change in collector current causes a change in voltage at the terminal.
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